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Evaluation of the generation mechanisms at surface and in the bulk of the silicon by current transient techniqueBARLETTA, Giacomo; CURRO, Giuseppe.Microelectronics and reliability. 2007, Vol 47, Num 4-5, pp 810-814, issn 0026-2714, 5 p.Conference Paper

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A simulation study on novel field stop IGBTs using superjunctionOH, Kwang-Hoon; LEE, Jaegil; LEE, Kyu-Hyun et al.I.E.E.E. transactions on electron devices. 2006, Vol 53, Num 4, pp 884-890, issn 0018-9383, 7 p.Article

SiGe-collector trench gate insulated gate bipolar transistor fabricated using multiple target sputteringKUDOH, Tsugutomo; ASANO, Tanemasa.Solid-state electronics. 2005, Vol 49, Num 12, pp 2006-2010, issn 0038-1101, 5 p.Article

A 2D physically based compact model for advanced power bipolar devicesIGIC, P. M; TOWERS, M. S; MAWBY, P. A et al.Microelectronics journal. 2004, Vol 35, Num 7, pp 591-594, issn 0959-8324, 4 p.Article

Computer simulation of multifinger heterojunction bipolar transistor with self-heating and thermal coupling modelsKUEN YU HUANG; YIMING LI; LEE, C.-P et al.Microelectronic engineering. 2004, Vol 75, Num 2, pp 137-144, issn 0167-9317, 8 p.Article

3.6 mΩ cm², 1726 V 4H-SiC normally-off trenched-and-implanted vertical JFETs and circuit applicationsZHAO, J. H; TONE, K; LI, X et al.IEE proceedings. Circuits, devices and systems. 2004, Vol 151, Num 3, pp 231-237, issn 1350-2409, 7 p.Conference Paper

1.7 kV NPTV-groove clustered IGBTSPULBER, O; SWEET, M; VERSHININ, K et al.IEE proceedings. Circuits, devices and systems. 2004, Vol 151, Num 3, pp 265-268, issn 1350-2409, 4 p.Conference Paper

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Analysis of mechanism for transparent emitterCAILIN, Wang; GAO YONG.International Semiconductor Conference. 2004, pp 359-362, isbn 0-7803-8499-7, 4 p.Conference Paper

Filamentation and Blow-up Ignition in p-n-p-n DevicesPAISANA, J; SANTOS, H. Abreu.Mediterranean electrotechnical conference. 2004, isbn 0-7803-8271-4, 3Vol, Vol.1, 47-50Conference Paper

Current state-of-the-art and future prospects for power semiconductor devices in power transmission and distribution applicationsJOHNSON, C. Mark.International journal of electronics. 2003, Vol 90, Num 11-12, pp 667-693, issn 0020-7217, 27 p.Article

Commande des semi-conducteurs de puissance : principes = Control of power semiconductor devices : principlesLEFEBVRE, Stéphane; MULTON, Bernard.Techniques de l'ingénieur. Génie électrique. 2002, Vol D5, Num D3231, pp D3231.1-D3231.23, issn 0992-5449Article

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Lateral Schottky rectifiers for power integrated circuitsJAGADESH KUMAR, M; SINGH, Yashvir.SPIE proceedings series. 2002, pp 414-421, isbn 0-8194-4500-2, 2VolConference Paper

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Development of 66 kV-class high-T_c superconducting power transmission cable: remarkable decrease in AC losses and production of prototype cableMIYOSHI, K; MUKOYAMA, S; TSUBOUCHI, H et al.Physica. C. Superconductivity and its applications. 2001, Vol 357-60, pp 1259-1262, 2Conference Paper

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